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101.
102.
Stress Heterogeneity Effect on the Strength of Silicon Nitride 总被引:1,自引:0,他引:1
François Hild Elisabeth Amer Didier Marquis 《Journal of the American Ceramic Society》1992,75(3):700-702
The experiments reported in this paper demonstrate the causes of the failure of monolithic ceramics. The specimens are made of silicon nitride and tested at room temperature. The stress field within the specimen is different for each of four series of tests that have been conducted. Fractographic observations have also been made to identify the causes of the failures. A size effect analysis is performed. 相似文献
103.
Uniformity of bulk density distribution during the die filling process is required to minimize quality problems, such as distortion and cracking, for powder compacts. Understanding the die filling process is necessary in ensuring a uniform powder deposition. The second-generation pressure deposition tester (PDT-II) was used to investigate the deposition process and final pressure distribution of powder filling in toroidal, cylindrical, and E-shaped dies. All tests were conducted using a spray-dried free-flowing granular powder. The results indicated that for toroidal dies: (1) the area around 0° orientation (the leeward end) had the highest pressure values (1186.7 to 2498.0 Pa), with the average pressure values of the remaining area 353.7-648.0 Pa; (2) the pressure distribution was symmetrical about the centerline parallel to the feed shoe movement direction; (3) the highest feed shoe speed (500 mm/s) led to the most nonuniform pressure distribution among the three speeds; (4) higher feed shoe speed did not always result in higher final pressure values; and (5) the right die tended to have higher final pressure values (215.0 to 2498.0 Pa) than the center die (95.4 to 2052.5 Pa). For E-shaped dies: (1) the final pressure values of the middle leg (308.9 to 760.7 Pa) were higher than those of the left and the right legs (148.9 to 530.3 Pa); (2) the area along the backside had the highest final pressure value (1054.6 to 1303.8 Pa); (3) the pressure distribution was symmetrical about the centerline parallel to the feed shoe movement direction; and (4) neither the center die nor the right die always had higher pressure values than the other one at all locations. Comparison between cylindrical and toroidal dies indicated that: (1) neither of the two die shapes (cylinder and toroid) led to consistently higher or lower final pressure values at all locations and (2) for all three feed shoe speeds, the toroidal die had higher average final pressure values in the 0° orientation. 相似文献
104.
The behavior of hydrogen absorption and release in hydrogen decrepitation (HD) process of Nd-Fe-B alloys were investigated. The results reveal that the reactivity and the amount of hydrogen absorption in HD process are related to the surface activity of the alloy so that the fresh and active surface has a higher efficiency. The presence of Nd-rich phase at the grain boundary is an essential factor of the HD activity of the alloy at room temperature. On degassing, hydrogen is released from the HD powder continuously with increasing temperature. And the residual hydrogen is as low as 0.0015% at 1073K, which shows that the hydrogen is almost exhaused. It is feasible to remove the hydrogen from the HD powder by heating treatment at the temperature of 523-723K for 1h prior to the magnetic field forming in order to decrease the harmful effect of hydrogen on the easy axis alignment of HD magnet. 相似文献
105.
Evaluation of Slow Crack Growth Resistance in Ceramics for High-Temperature Applications 总被引:1,自引:0,他引:1
The slow (subcritical) crack growth (SCG) resistance of Si3 N4 and SiC ceramics has been evaluated by a stepwise loading test on bending bars precracked by Vickers indentation. Three highly refractory materials were selected for the evaluation: i.e., (1) high-purity Si3 N4 sintered by hot isostatic pressing (HIP) without additives and (2,3) α - and β - SiC pressureless sintered with B and C addition. Under the hypothesis of linear elastic behavior at high temperature, which was found satisfied in the present materials, the SCG resistance was expressed in terms of initial stress intensity factor critical for SCG failure within a predetermined lifetime. The present method was found useful in shortening the testing time and consistent with other traditional fatigue tests (e.g., static-fatigue test): It is recommended as a screening test for materials under research and development. Among the materials tested in the present study, the highest SCG resistance up to 1440°C was found in the high-purity Si3 N4 without additives. 相似文献
106.
Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs
Jon Geist Deane Chandler-Horowitz A. M. Robinson C. R. James 《Journal of research of the National Institute of Standards and Technology》1991,96(4):463-469
The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bias conditions before calculating the quantum efficiency, and easy access to the highest numerical accuracy available from PC-1D, neither of which is conveniently available with PC-1D’s standard user interface. 相似文献
107.
在鱼罐喷粉预处理水模实验数据的基础上,进一步利用线性回归确定各工艺操作参数对喷吹基本参数(均混时间、粉剂穿透比和粉剂停留时间)的影响,得出各传输动力学基本参数的函数关系式。 相似文献
108.
109.
Crystallization of Polymer-Derived Silicon Carbonitride at 1873 K under Nitrogen Overpressure 总被引:1,自引:0,他引:1
Martin Friess Joachim Bill Jerzy Golczewski re Zimmermann Fritz Aldinger Ralf Riedel Rishi Raj 《Journal of the American Ceramic Society》2002,85(10):2587-2589
The chemical stability of an amorphous silicon carbonitride ceramic, having the composition 0.57SiC·0.43Si3 N4 ·0.49C is studied as a function of nitrogen overpressure at 1873 K. The ceramic suffers a weight loss at p N2 < 3.5 bar (1 bar = 100 kPa), does not show a weight change from 3.5 to 11 bar, and gains weight above 11 bar. The structure of the ceramic changes with pressure: it is crystalline from 1 to 6 bar, amorphous at ∼10 bar, and is crystalline above ∼10 bar. The weight-loss transition, at 3.5 bar, is in excellent agreement with the prediction from thermodynamic analysis when the activities of carbon, SiC, and Si3 N4 are set equal to those of the crystalline forms; this implies that the material crystallizes before decomposition. The amorphous to crystalline transition that occurs at ∼10 bar, and which is accompanied by weight gain, is likely to have taken place by a different mechanism. A nucleation and growth reaction with the atmospheric nitrogen is proposed as the likely mechanism. The supersaturation required to nucleate α-Si3 N4 crystals is calculated to be 30 kJ/mol. 相似文献
110.
The interaction between thin films of hydrogenated amorphous silicon and sputter-deposited chromium has been studied. Following
deposition of the chromium films at room temperature, the films were annealed over a range of times and temperatures below
350°C. It was found that an amorphous silicide was formed only a few nanometers thick with the square of thickness proportional
to the annealing time. The activation energy for the process was 0.55±0.05 eV. The formation process of the silicide was very
reproducible with the value of density derived from the thickness and Cr surface density being close to the value for crystalline
CrSi2 for all films formed at temperatures ≤300°C. The specific resistivity of the amorphous CrSi2 was ≈600 μΩ·cm and independent of annealing temperature. 相似文献